Dr. Ellis Cumberbatch


 

Professor

Program Director of  Joint Ph.D. Program in Engineering and Industrial Applied Mathematics

Contact Information

  • Home Page: http://www.cgu.edu/pages/1511.asp
  • E-mail: Ellis.Cumberbatch(at)cgu.edu  -- (at) = @
  • Voice: (909) 607-3369
  • Fax: (909) 607-8261
  • Mailing Address:
    School of Mathematical Sciences
    Claremont Graduate University
    710 N. College
    Claremont, CA 91711
 
     


Research interests

  • Applied mathematics
  • Industrial modeling
  • Differential equations
  • Fluid mechanics
  • Semi-conductors

Recent Research and Publications (2001 ~ present)

 Journal papers:

  • E. Cumberbatch, H. Abebe, and Hedley Morris, "Current-Voltage characteristics from an asymptotic analysis of the MOSFET equations." Journal of Engineering Mathematics, Kluwer Academic Publishers (a part of Springer). Vol. 39,  PP. 25-46, March 2001. [pdf]
     
  • H. Abebe, E. Cumberbatch, V. Tyree, and H. Morris, "MOSFET device modeling using methods of asymptotic analysis." Internet Journal ElectronicsLetters.com (a part of Elektrorevue journal), ISSN 1213-161X, May 20, 2003. [HTML]
     
  • H. Morris, E. Cumberbatch, V. Tyree and H. Abebe, "Analytical results for the I-V characteristics of a fully depleted SOI-MOSFET." IEE Proc. Circuits, Devices & Systems, Vol. 152, Issue 6, P. 630-632, December 2005. [pdf].
  • W. Fang, E. Cumberbatch, "Matrix Properties of Data from Electrical Capacitance Tomography." Journal of Engineering Mathematics, Volume 51, Number 2, pp. 127-146, February 2005. [Publisher's Page]
     
  • E. Cumberbatch, H. Abebe and Uno, S, "Nano-Scale MOSFET device modeling with quantum mechanical effects." European Journal of Applied Mathematics, Cambridge University Press, 2006. (Accepted).
     
  • Uno, S, H. Abebe and E. Cumberbatch, "Analytical descriptions of inversion layer quantum effects using a density gradient model and singular perturbation theory." (Submitted to IEEE Tran. Electron Devices).

 

 Refereed & reviewed conference proceedings:

  • H. Abebe and E. Cumberbatch, "Quantum mechanical  effects correction models for inversion charge and current-voltage (I-V) characteristics of the MOSFET device." Proceedings  2003 Nanotechnology Conference, Vol 2, pp 218-221, February 23-27, 2003. San Francisco, CA, USA. [pdf] (Oral presentation).
     
  • H. Abebe and E. Cumberbatch, "Modeling quantum effects on MOSFET channel surface potential."Proceedings  2004 International Conference on Computing, Communications and Control Technologies: CCCT'04, Vol. 7, pp198-201, August 14-17, 2004, Austin, Texas, USA. [pdf] (Oral presentation).
     
  • H. Abebe, E. Cumberbatch, V. Tyree and H. Morris, "MOSFET Analytical Inversion Charge Model with Quantum Effects Using a Triangular Potential Well Approximation." Proceedings  2005 Nanotechnology Conference, Vol. 3, pp. 64-67, Anaheim, CA, May 8-12, 2005. [pdf] (Poster).
     
  • E. Cumberbatch, H. Abebe, H. Morris and V. Tyree, "Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS." Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 57-60, Anaheim, CA, May 8-12, 2005 . [pdf] (Poster).
     
  • H. Morris, E. Cumberbatch and H. Abebe, "SOS Gate Capacitance Modeling." Proceedings  2005 Nanotechnology Conference, Vol. 3, pp. 68-71, Anaheim, CA, May 8-12, 2005. [pdf] (Poster).
     
  • H. Abebe, V. Tyree, E. Cumberbatch and H. Morris, "A Simplified Current-Voltage (I-V) Characteristics Model with Quantum Mechanical Effects for n-channel MOSFET." The 9th World Multi-Conference, WMSCI Proceedings, Vol. 6, pp. 211-214, Orlando, FL, July 10-13, 2005. [pdf] (Oral presentation and selected as the best paper in the session).
     
  • H. Morris, E. Cumberbatch, H. Abebe and V. Tyree, "Analytical Modeling of Impact Ionization and Polysilicon Gate Depletion Effects for Application in Circuit Simulation." The 9th World Multi-Conference, WMSCI Proceedings, Vol. 3, pp. 319-323, Orlando, FL, July 10-13, 2005. [pdf] (Oral presentation).
     
  • H. Abebe, E. Cumberbatch, H. Morris and V. Tyree, "Analytical models for quantized sub-band energy levels and inversion charge centroid for MOS structures derived from asymptotic and WKB approximations."Proceedings  2006 Nanotechnology Conference, Vol. 3, pp. 519-522, May 7-11, 2006, Boston, Massachusetts, USA. [pdf] (Poster)
     
  • H. Morris, H. Abebe, E. Cumberbatch and Uno, S., "Compact models for double gate and surround gate MOSFETs." Proceedings  2006 Nanotechnology Conference, , Vol. 3, pp. 824-827, May 7-11, 2006, Boston, Massachusetts, USA. [pdf] [slides] (Poster)
     

 Technical notes and conference abstracts:

  • Ellis Cumberbatch, Henok Abebe, Maria Nunez, Mariam Nuno, Diana Verzi, Zhiyu Bo, Shomeek Mukhopadhyay, Dina Rojas, and Vance Tyree, "MOSFET device modeling," Claremont Graduate University and USC-ISI MOSIS service, final report, June 1998.
     
  • Henok Abebe and Ellis Cumberbatch, "Modeling quantum effects on current/voltage characteristics of a MOSFET transistor," 4th SoCAMS Symposium, April 24, 2004, Claremont, CA, USA. [pdf] (Oral presentation).
     
  • Uno, S., H. Abebe,  and E. Cumberbatch, "Analytical solutions to quantum drift-diffusion equation for quantum mechanical modeling of MOS structures," Solid State Device and Materials, Sep. 12-15, extended abstracts pp. 592-593, Kobe, Japan, 2005. [pdf] (Poster).
     
  • Uno, S, H. Abebe and E. Cumberbatch, "Analytical formulae of quantum-mechanical electron density in inversion layer in planar MOSFETs."  IWCM 2006, p.25, January 24, 2006, Pacifico Yokohama, Yokohama, Japan. [pdf] (Oral presentation).

@ VITA (old version including research and publications < 2001 )