Dr. Ellis Cumberbatch


Professor
Program Director of Joint Ph.D. Program in Engineering and Industrial Applied Mathematics
Contact Information
 Home Page: http://www.cgu.edu/pages/1511.asp
 Email: Ellis.Cumberbatch(at)cgu.edu  (at) = @
 Voice: (909) 6073369
 Fax: (909) 6078261
 Mailing Address:
School of Mathematical Sciences
Claremont Graduate University
710 N. College
Claremont, CA 91711




Research interests
 Applied mathematics
 Industrial modeling
 Differential equations
 Fluid mechanics
 Semiconductors
Recent Research and Publications (2001 ~ present)
Journal papers:
 E. Cumberbatch, H. Abebe, and Hedley Morris, "CurrentVoltage characteristics from an asymptotic analysis of the MOSFET equations." Journal of Engineering Mathematics, Kluwer Academic Publishers (a part of Springer). Vol. 39, PP. 2546, March 2001. [pdf]
 H. Abebe, E. Cumberbatch, V. Tyree, and H. Morris, "MOSFET device modeling using methods of asymptotic analysis." Internet Journal ElectronicsLetters.com (a part of Elektrorevue journal), ISSN 1213161X, May 20, 2003. [HTML]
 H. Morris, E. Cumberbatch, V. Tyree and H. Abebe, "Analytical results for the IV characteristics of a fully depleted SOIMOSFET." IEE Proc. Circuits, Devices & Systems, Vol. 152, Issue 6, P. 630632, December 2005. [pdf].
 W. Fang, E. Cumberbatch, "Matrix Properties of Data from Electrical Capacitance Tomography." Journal of Engineering Mathematics, Volume 51, Number 2, pp. 127146, February 2005. [Publisher's Page]
 E. Cumberbatch, H. Abebe and Uno, S, "NanoScale MOSFET device modeling with quantum mechanical effects." European Journal of Applied Mathematics, Cambridge University Press, 2006. (Accepted).
 Uno, S, H. Abebe and E. Cumberbatch, "Analytical descriptions of inversion layer quantum effects using a density gradient model and singular perturbation theory." (Submitted to IEEE Tran. Electron Devices).
Refereed & reviewed conference proceedings:
 H. Abebe and E. Cumberbatch, "Quantum mechanical effects correction models for inversion charge and currentvoltage (IV) characteristics of the MOSFET device." Proceedings 2003 Nanotechnology Conference, Vol 2, pp 218221, February 2327, 2003. San Francisco, CA, USA. [pdf] (Oral presentation).
 H. Abebe and E. Cumberbatch, "Modeling quantum effects on MOSFET channel surface potential."Proceedings 2004 International Conference on Computing, Communications and Control Technologies: CCCT'04, Vol. 7, pp198201, August 1417, 2004, Austin, Texas, USA. [pdf] (Oral presentation).
 H. Abebe, E. Cumberbatch, V. Tyree and H. Morris, "MOSFET Analytical Inversion Charge Model with Quantum Effects Using a Triangular Potential Well Approximation." Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 6467, Anaheim, CA, May 812, 2005. [pdf] (Poster).
 E. Cumberbatch, H. Abebe, H. Morris and V. Tyree, "Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS." Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 5760, Anaheim, CA, May 812, 2005 . [pdf] (Poster).
 H. Morris, E. Cumberbatch and H. Abebe, "SOS Gate Capacitance Modeling." Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 6871, Anaheim, CA, May 812, 2005. [pdf] (Poster).
 H. Abebe, V. Tyree, E. Cumberbatch and H. Morris, "A Simplified CurrentVoltage (IV) Characteristics Model with Quantum Mechanical Effects for nchannel MOSFET." The 9th World MultiConference, WMSCI Proceedings, Vol. 6, pp. 211214, Orlando, FL, July 1013, 2005. [pdf] (Oral presentation and selected as the best paper in the session).
 H. Morris, E. Cumberbatch, H. Abebe and V. Tyree, "Analytical Modeling of Impact Ionization and Polysilicon Gate Depletion Effects for Application in Circuit Simulation." The 9th World MultiConference, WMSCI Proceedings, Vol. 3, pp. 319323, Orlando, FL, July 1013, 2005. [pdf] (Oral presentation).
 H. Abebe, E. Cumberbatch, H. Morris and V. Tyree, "Analytical models for quantized subband energy levels and inversion charge centroid for MOS structures derived from asymptotic and WKB approximations."Proceedings 2006 Nanotechnology Conference, Vol. 3, pp. 519522, May 711, 2006, Boston, Massachusetts, USA. [pdf] (Poster)
 H. Morris, H. Abebe, E. Cumberbatch and Uno, S., "Compact models for double gate and surround gate MOSFETs." Proceedings 2006 Nanotechnology Conference, , Vol. 3, pp. 824827, May 711, 2006, Boston, Massachusetts, USA. [pdf] [slides] (Poster)
Technical notes and conference abstracts:
 Ellis Cumberbatch, Henok Abebe, Maria Nunez, Mariam Nuno, Diana Verzi, Zhiyu Bo, Shomeek Mukhopadhyay, Dina Rojas, and Vance Tyree, "MOSFET device modeling," Claremont Graduate University and USCISI MOSIS service, final report, June 1998.
 Henok Abebe and Ellis Cumberbatch, "Modeling quantum effects on current/voltage characteristics of a MOSFET transistor," 4th SoCAMS Symposium, April 24, 2004, Claremont, CA, USA. [pdf] (Oral presentation).
 Uno, S., H. Abebe, and E. Cumberbatch, "Analytical solutions to quantum driftdiffusion equation for quantum mechanical modeling of MOS structures," Solid State Device and Materials, Sep. 1215, extended abstracts pp. 592593, Kobe, Japan, 2005. [pdf] (Poster).
 Uno, S, H. Abebe and E. Cumberbatch, "Analytical formulae of quantummechanical electron density in inversion layer in planar MOSFETs." IWCM 2006, p.25, January 24, 2006, Pacifico Yokohama, Yokohama, Japan. [pdf] (Oral presentation).
@ VITA (old version including research and publications < 2001 )

